Minority-carrier transport parameters in heavily doped p-type silicon at 296 and 77 K

摘要

Minority-carrier electron lifetime, mobility and diffusion length in heavily doped p-type Si were measured at 296 and 77 K. It was found that a 296 K mu /sub n/ (pSi) approximately= mu /sub n/ (nSi) for N/sub AA/>or approximately=5*10/sup 18/ cm/sup -3/, while mu /sub n/ (pSi)/ mu /sub n/ (nSi) approximately=1 to 2.7 for higher dopings. The results also show that for N/sub AA/>or approximately=3*10/sup 19/ cm/sup -3/, D (pSi) at 77 K is smaller than that at 296 K, while for higher dopings D/sub n/ (pSi) is larger at 77 K than at 296 K. mu /sub n/ (pSi) at 77 K increases with the increasing doping above N/sub AA/<3*10/sup 18/ cm/sup -3/, in contrast to the opposite dependence for mu /sub n/ (nSi) in n/sup +/ Si.