Integrated electronic shutter for back-illuminated charge-coupled devices

摘要

A novel electronic shutter has been integrated into the structure of a back-illuminated frame-transfer charge-coupled device (CCD) to permit short optical exposure times and to reduce the smear that occurs during the transfer of an image from the CCD detection area. The shutter consists of an n/sup +/ shutter drain placed in the vertical channel stop regions and stepped p-type buried layers formed by a high-energy implantation (1.0-1.5 MeV) located between the CCD n-type buried channel the and p substrate. These structures create electric fields that direct the photoelectrons to either the CCD detection region or the n/sup +/ shutter drain. The ratio of photons detected with the shutter open to photons detected with the shutter closed has been measured to be greater than 75000 for wavelengths below 540 nm. The corresponding shutter rise and fall times are less than 55 ns.