Design modeling of high-efficiency p/sup +/-n indium phosphide solar cells

摘要

A parametric study of p/sup +/-n indium phosphide solar cells has been conducted using the PC-1D computer program. The effect of base doping on cell efficiency has been studied, and it is found that cell efficiency is a maximum for impurity concentrations around 10/sup 17/ cm/sup -3/. The variation of minority-carrier diffusion length as a function of base doping has been included. Using realistic values of electronic and material parameters, cell efficiencies in excess of 24% AM0 (25 degrees C) are predicted.