Hot-carrier-injected oxide region in front and back interfaces in ultra-thin (50 nm), fully depleted, deep-submicron NMOS and PMOSFET's/SIMOX and their hot-carrier immunity

摘要

The hot-carrier-injected oxide region in the front and back interfaces is systematically clarified for fully depleted surface-channel nMOSFET's and surface-channel and buried-channel pMOSFET's fabricated on an ultra-thin (50 nm)-film SIMOX wafer. Based on these results, the influence of these injected carriers on front-channel properties is investigated. NMOSFET degradation is shown to be caused by hot-carriers injected into the drain side of the front oxide and pMOSFET degradation by hot-electrons injected into the drain side of both the front oxide and the back oxide. Additionally, it is shown experimentally that these fully depleted devices with effective channel lengths between 0.1-0.2 /spl mu/m have fairly high hot-carrier immunity, even for single-drain structures.