Modeling of oxide-charge generation during hot-carrier degradation of PMOSFET's

摘要

Oxide-charge generation determines the lifetime for hot-carrier degradation of PMOSFET's. We present a model for the generation of oxide charge and its influences on transistor characteristics. Our model explains the logarithmic time dependence for the generation of oxide charge that is observed systematically for many PMOSFET types. This model is in accordance with an empirical prediction method for PMOSFET degradation that has been published earlier. Furthermore, a relation between the injected charge and the amount of degradation is presented. The paper ends with some applications.