A new patterning process concept for large-area transistor circuit fabrication without using an optical mask aligner

摘要

A new concept to produce large thin film transistor liquid crystal displays (TFT-LCD's) without using an optical mask aligner is proposed which emphasizes patterning technology. Some experimental thin film transistors (TFT's) are fabricated according to the concept and operated like conventional transistors fabricated by using an optical mask aligner. The concept includes improvement of printing technology and development of a double-layer resist method. The latter method employs a printed ink pattern and a photoresist. This prevents contamination of thin films by metal impurities which affect electrical characteristics of the TFT's. A special gravure offset printing technology is proposed, composed of a large thixotropy valued UV ink, and a fine, precision etched glass intaglio. The experimental TFT's, with a designed minimum gate length of 10 /spl mu/m, have comparable electric characteristics to those of conventional poly-Si TFT's.