首页> 外文期刊>IEEE Transactions on Electron Devices >Excess collector current due to an oxide-trapped-charge-induced emitter in irradiated NPN BJT's
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Excess collector current due to an oxide-trapped-charge-induced emitter in irradiated NPN BJT's

机译:NPN BJT辐照中由于氧化物俘获的电荷感应发射极导致的集电极电流过大

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摘要

Excess collector current in irradiated NPN BJT's is linked to an oxide-trapped-charge-induced inversion layer acting as an additional emitter. Excess collector current is modeled by interpreting the inversion layer as an extension of the emitter.
机译:受辐照的NPN BJT中的过多集电极电流与用作附加发射极的氧化物俘获的电荷诱导的反型层有关。通过将反型层解释为发射极的扩展来建模多余的集电极电流。

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