Detailed turn-on measurements of 4H-Silicon Carbide (SiC) npnp thyristors are presented for a wide range of operating conditions. Comparisons with similarly-rated silicon and Gallium Arsenide thyristors show a superior rise time and pulsed turn-on performance of SiC thyristors. Rise time for a 400 V blocking voltage, 4 V forward drop (2.8/spl times/10/sup 3/ A/cm/sup 2/) SiC thyristor has been found to be of the order of 3-5 ns. Pulsed turn on measurements show a residual voltage of only 50 V when a current density of 10/sup 5/ A/cm/sup 2/ (35 A) was achieved in 20 ns.
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机译：给出了适用于各种工作条件的4H碳化硅（SiC）npnp晶闸管的详细导通测量结果。与具有相同额定值的硅和砷化镓晶闸管的比较显示出SiC晶闸管具有更高的上升时间和脉冲开启性能。发现400 V阻断电压的上升时间，4 V正向下降（2.8 / spl次/ 10 / sup 3 / A / cm / sup 2 /）SiC晶闸管约为3-5 ns。脉冲开启测量显示，在20 ns内达到10 / sup 5 / A / cm / sup 2 /（35 A）的电流密度时，残留电压仅为50V。
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