A simple method for the thermal resistance measurement of AlGaAs/GaAs heterojunction bipolar transistors

摘要

A novel electrical method to accurately measure the thermal resistance of heterojunction bipolar transistors (HBT's) is presented. The key advantage of the method is its simplicity, because it requires only the measurement of the device DC output characteristics at two different temperatures. In this brief, the measurement technique is illustrated, applied to multifinger HBT's and compared with other methods.