Two-dimensional semiconductor device simulation of trap-assisted generation-recombination noise under periodic large-signal conditions and its use for developing cyclostationary circuit simulation models

摘要

The simulation of generation-recombination (GR) noise under periodic large-signal conditions in a partial differential equation-based silicon device simulator is presented. Using the impedance-field method with cyclostationary noise sources, it is possible to simulate the self- and cross-spectral densities between sidebands of a periodic large-signal stimulus. Such information is needed to develop noise correlation matrices for use with a circuit simulator. Examples are provided which demonstrate known results for shot noise in bipolar junction transistors. Additional results demonstrate the upconversion of low-frequency GR noise for microscopically cyclostationary noise sources and provide evidence for applying the modulated stationary noise model for low-frequency noise when there is a nearly quadratic current dependence.