Evaluation of the Impact of Layout on Device and Analog Circuit Performance With Lateral Asymmetric Channel MOSFETs

摘要

Lateral asymmetric channel (LAC) or single halo devices have been reported to exhibit excellent short channel behavior in the sub-100-nm regime. In this paper, we have quantified the performance degradation in LAC devices due to fingered layouts. Our mixed-mode two-dimensional simulation results show that though the fingered layout of the device limits the performance of these MOSFETs, they still show superior performance over the conventional devices in the sub-100-nm channel length regime. We also present the simulation results of a two-stage operational amplifier with LAC and conventional devices using a 0.13μm technology with the help of look-up table simulations. Our results show that for the given design specifications, an OPAMP layout with conventional devices occupies 18% more chip area compared to the LAC device.