Estimating Lateral Straggling of Boron Profiles Ion Implanted Into Crystalline Silicon With a Tilt Angle of 0° Using Off-Angle Substrates

摘要

Boron was ion implanted into θ° off-angle crystalline silicon substrates with a tilt angle of θ°. It is assumed that the B profiles along the ion-beam direction are identical, enabling the lateral straggling of B ion implanted with a tilt angle of 0° to be evaluated experimentally for the first time. The measurements show that the lateral straggling of channeling ions is small.