Impact of Downscaling and Poly-Gate Depletion on the RF Noise Parameters of Advanced nMOS Transistors

摘要

For the first time, the effects of poly depletion on the RF noise performance of advanced CMOS transistors are reported and analyzed. Based on measurements and physical device simulations we quantify the increasing danger of poly gate depletion with downscaling on the RF noise parameters of CMOS devices. While poly depletion does not affect the minimum noise figure, it results in a degradation of the noise matching freedom for RFIC designers. This trend worsens with technology downscaling.