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首页> 外文期刊>IEEE Transactions on Electron Devices >A Detailed Qualitative Model for the Programming Physics of Silicided Polysilicon Fuses
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A Detailed Qualitative Model for the Programming Physics of Silicided Polysilicon Fuses

机译:硅化多晶硅熔丝编程物理的详细定性模型

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This paper presents a detailed qualitative model for the programming physics of 90-nm silicided polysilicon fuses that is derived from a wide range of measurement data. These insights have led to a programming time of 100 ns, while achieving a resistance increase of times. This is an order of magnitude better than any previously published result for the programming time and resistance increase individually. Simple calculations and TEM-analyses substantiate the proposed programming mechanism. The insights explain the importance of the falling edge of the programming pulse. The advantage of a rectangular fuse head over a tapered fuse head is shown and explained. Polysilicon doping type is shown to have little influence on the programming result. Finally, the stability of fuses programmed with this method is shown to be very high. This paper is an extended version of a work published previously and provides a more detailed description of the programming physics, additional insight into the influence of the edges of the programming pulse, the effect of doping and the stability of the devices after programming.
机译:本文为90纳米硅化多晶硅熔丝的编程物理学提供了详细的定性模型,该模型是从大量测量数据中得出的。这些见解导致了100 ns的编程时间,同时实现了电阻的增加。对于编程时间和电阻的单独增加,这比任何先前公布的结果好一个数量级。简单的计算和TEM分析证实了所提出的编程机制。这些见解解释了编程脉冲下降沿的重要性。示出并说明了矩形保险丝头相对于锥形保险丝头的优点。多晶硅掺杂类型对编程结果影响很小。最后,用这种方法编程的保险丝的稳定性非常高。本文是先前发表的工作的扩展版本,提供了对编程物理学的更详细描述,对编程脉冲边沿的影响,掺杂的影响以及编程后器件稳定性的更多见解。

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