An Analytical Model of Electric Substrate Losses for Planar Spiral Inductors on Silicon

摘要

This paper presents a physically based model for estimating the substrate losses due to electric field penetration for planar spiral inductors on silicon not using patterned ground shield. The model, which does not use any fitting parameter, shows excellent agreement with measured data. It has been tested across a variety of inductor geometries and two different substrates up to 10 GHz