Technology Circuit Co-Design for Ultra Fast InSb Quantum Well Transistors

摘要

Indium antimonide (InSb)-based quantum-well field- effect transistors (QWFETs) are conceived as a promising candidate for low-voltage high-performance applications. In this paper, we show complete technology-circuit assessment of InSb-based QWFETs. The codesign approach spans from the device/SPICE models, logic/memory circuit analysis, to technology requirements. We show the feasibility of the use of Si+InSb hybrid technology for future high-speed low-voltage applications. We prescribe the technology requirements as well as suggest the application space for InSb transistors.