A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature

摘要

This paper presents the development and demonstration of large-area 10-kV 4H-SiC DMOSFETs that maintain a classically stable low-leakage normally off subthreshold characteristic when operated at $leq hbox{200} ^{circ}hb