A 6,13-bis(Triisopropylsilylethynyl) Pentacene Thin-Film Transistor Using a Spun-On Inorganic Gate-Dielectric

摘要

We present the latest results of the use of soluble materials such as organic semiconductors (OSCs) or gate-dielectrics for simplified processing of organic thin-film transistors (OTFTs). In this paper, we described our fabrication of a solution-processed OTFT with 6,13-bis(Triisopropylsilylethynyl) pentacene (TIPS-pentacene) as the OSC and siloxane-based spin-on glass (SOG) as the inorganic gate-dielectric. Also, synthesized TIPS-pentacene and SOG were examined for use as the OSC and gate-dielectric in an OTFT. From electrical measurements, we obtained device performance characteristics such as charge carrier mobility, threshold voltage, current on/off ratio, and subthreshold swing, which were $hbox{6.48} times hbox{10}^{-3} ,hbox{cm}^2 hbox{/V} cdot hbox{s}, -13$ V, $sim$100, and 1.83 V/dec, respectively.