AlGaN/GaN MOSHEMTs With Liquid-Phase-Deposited $ hbox{TiO}_{2}$ as Gate Dielectric

摘要

$hbox{TiO}_{2}$ films deposited on GaN layers at room temperature through a simple and low-cost liquid-phase deposition (LPD) method are investigated and served as gate dielectrics in AlGaN/GaN MOSHEMTs. The electrical characteristics of the MOS structure on n-doped GaN show that the leakage current is about $hbox{1.01} times hbox{10}^{-7} hbox{A/cm}^{2}$ at 1 MV/cm and that the breakdown field is more than 6.5 MV/cm. The maximum drain current density of MOSHEMTs is higher than that of conventional HEMTs, and a wider gate voltage swing can also be observed. The maximum transconductance and threshold voltage almost maintain the same characteristics, even after inserting a dielectric layer between the gate metal and the 2DEG channel by using $ hbox{TiO}_{2}$ as a gate dielectric. The gate leakage current density is significantly improved, and the bias stress measurement shows that current collapse is much suppressed for MOSHEMTs.