A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors

摘要

A new quasi-2-D model for laterally diffused metal–oxide–semiconductor radio-frequency power transistors is described in this paper. We model the intrinsic transistor as a series laterally diffused p-channel and n-type drift region network, where the regional boundary is treated as a reverse-biased $hbox{p}^{+}$-n diode. A single set of 1-D energy transport equations is solved across a 2-D cross section in a “current-driven” form, and specific device features are modeled without having to solve regional boundary node potentials using numerical iteration procedures within the model itself. This fast process-oriented nonlinear physical model is scalable over a wide range of device widths and accurately models direct-current and microwave characteristics.