High-Power InGaN-Based LED With Tunneling-Junction-Induced Two-Dimensional Electron Gas at AlGaN/GaN Heterostructure

摘要

We demonstrate high-performance InGaN–based light-emitting diodes (LEDs) with tunneling-junction-induced 2-D electron gas (2-DEG) at n-AlGaN/GaN heterostructure, inserted in the middle of the $hbox{p}^{++}$-GaN contact layer of a conventional LED structure. The LED with a 2-DEG layer exhibits about 20% enhancement in output power, as compared with that of the conventional LED at 350 mA, which is believed to be due to enhanced hole-injection efficiency and better lateral current spreading by the presence of 2-DEG at the AlGaN/GaN heterostructure.