Nanoelectromechanical Memory Cell (T Cell) for Low-Cost Embedded Nonvolatile Memory Applications

摘要

A novel nanoelectromechanical memory cell (T cell) design has been proposed and successfully demonstrated by simulation and experimental results of its prototype cell. The T-cell structure has a simpler fabrication process than the previously reported H cell because the T cell needs only two metal line layers. The T cell can be used for low-cost embedded nonvolatile memory applications.