Nonvolatile memory cells having an embedded selection element and nonvolatile memory cell arrays including the nonvolatile memory cells

摘要

A nonvolatile memory cell includes a semiconductor layer including a first recess and a second recess. A first gate insulation layer is disposed on a bottom surface and side surfaces of the first recess. A second gate insulation layer is disposed on a bottom surface and side surfaces of the second recess. A variable resistive material layer is disposed on a first region of the semiconductor layer disposed between the first and second recesses. An insulation barrier layer disposed on a top surface and side surfaces of the variable resistive material layer. A gate electrode surrounding the insulation barrier layer and extending to fill the first and second recesses.