Comment on “Channel Length and Threshold Voltage Dependence of a Transistor Mismatch in a 32-nm HKMG Technology”

摘要

This correspondence briefly describes and reconciles two separate streams of work, which extend the Pelgrom model for a transistor mismatch. While independently conceived and pursued, similar and complementary conclusions have been reported by these groups, refining the understanding of a transistor mismatch to encompass halo-dominated transistor designs.