Low-Voltage Transparent Indium–Zinc–Oxide Coplanar Homojunction TFTs Self-Assembled on Inorganic Proton Conductors

摘要

$hbox{H}_{3}hbox{PO}_{4}$-incorporated nanocolumnar $hbox{SiO}_{2}$-based proton conductors show an enhanced electric double layer (EDL) capacitance value of $sim!!hbox{8} mu hbox{F/cm}^{2}$ at 20 Hz. The upper frequency limit of EDL formation is found to be higher than 10 kHz. Transparent indium–zinc–oxide (IZO) coplanar homojunction thin-film transistors gated by such proton conductors are fabricated by one metal shadow mask self-assembled method. The operating voltage is found to be as low as 0.6 V. The current on/off ratio, the subthreshold swing, and field-effect mobility are estimated to be $hbox{6} times hbox{10}^{5}$ , 68 mV/dec, and 12 $hbox{cm}^{2}/hbox{V}cdot hbox{s}$ , respectively. Such transparent transistors hold promise for low-cost and portable electrochromic devices and invisible biochemical sensors.