A New Cost-Effective Metal–Insulator–Metal Capacitor Processed at 350 $^{circ}hbox{C}$ Using $ hbox{Ni}_{2}hbox{Si}$ Fully Silicided Amorphous Silicon Electrodes

摘要

Without requiring noble metal materials, a novel low-cost $hbox{Ni}_{2} hbox{Si/TiO}_{2}/hbox{Ni}_{2}hbox{Si}$ metal–insulator–metal (MIM) capacitor processed at 350 $^{circ}hbox{C}$ has been developed using nickel fully silicided (Ni-FUSI) amorphous silicon electrodes. A high capacitance density of 17 $hbox{fF}/muhbox{m}^{2}$ along with a low top-electrode resistivity of $sim hbox{38} muOmega cdot hbox{cm}$ were achieved. At 25 $^{circ}hbox{C}$, this MIM capacitor also displays a good leakage current density of $hbox{6.4} times hbox{10}^{-6} hbox{A/cm}^{2}$ at $-$1 MV/cm (-2.5 V) and a quadratic voltage coefficient $alpha$ of 4110 $hbox{ppm/V}^{2}$. Schottky emission dominates the leakage current in low negative field ($$hbox{TiO}_{2}$ film was 0.39 eV. Material characterization further reveals that this structure is highly appropriate for future ultralarge-scale-integration technologies.