High-Performance $hbox{Ni}/hbox{Lu}_{2}hbox{O}_{3}/ hbox{TaN}$ Metal–Insulator–Metal Capacitors

摘要

We fabricate the $hbox{Ni}/hbox{Lu}_{2}hbox{O}_{3}/hbox{TaN}$ metal–insulator–metal capacitor with a high capacitance density of 7.5 $hbox{fF}/muhbox{m}^{2}$, a relatively small quadratic voltage coefficient of capacitance (VCC) of 75 $hbox{ppm}/hbox{V}^{2}$, a low leakage current of $hbox{5} times hbox{10}^{-8} hbox{A}/hbox{cm}^{2}$ at $-$1 V, and an excellent ten-year reliability with a very low $Delta C/C$ of 0.51% at 3 V. These small VCC value and good reliability are attributed to a reduction of carrier injection and trapping into the dielectric.