Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated by $hbox{SiO}_{2}$-Based Solid Electrolyte

摘要

A simple self-assembling approach with only one nickel shadow mask is developed for flexible transparent thin-film transistors (TFTs) with patterned channel fabrication. An ultralow operation voltage of 1.5 V is realized due to the large specific gate capacitance (1.5 $muhbox{F/cm}^{2}$ ) of the microporous $hbox{SiO}_{2}$-based solid-electrolyte dielectric. Flexible transparent indium–tin-oxide TFTs exhibit a good performance with a low subthreshold swing of $<$ 70 mV/dec and a large on/off ratio of $sim!!hbox{10}^{7}$, respectively. Such low-voltage flexible transparent TFTs with a simple self-assembling process are promising for portable flexible transparent electronics applications.