In-Plane-Gate Oxide-Based Thin-Film Transistors Self-Aligned on Stacked Self-Assembled Monolayer/$hbox{SiO}_{2}$ Electrolyte Dielectrics

摘要

Low-voltage oxide-based thin-film transistors (TFTs) gated by stacked self-assembled octadecylphonic acid (ODPA) monolayer/$hbox{SiO}_{2}$ electrolyte with an in-plane-gate structure are self-aligned by one nickel shadow mask at room temperature. The stacked gate dielectrics show a reduced gate leakage current with the aid of the well-organized dense-stacked ODPA monolayer buffer. The equivalent field-effect mobility, subthreshold voltage swing, and drain current on/off ratio of such TFTs are estimated to be 11 $hbox{cm}^{2}/hbox{V}cdothbox{s}$, 140 mV/dec, and $hbox{10}^{6}$, respectively. Such low-voltage in-plane-gate TFTs are very promising for low-cost portable sensors.