Numerical Simulations of Automatic Change of Threshold Voltage Shift in SRAM With Double-Floating-Gate Structures

摘要

We theoretically investigate the self-adjustment mechanism of the threshold voltage shift of the static random access memory (SRAM) based on the double-floating-gate (DFG) structure by considering the capacitive coupling between the neighboring DFGs. We numerically show that the threshold voltage shift is enhanced by the interference between DFGs through the capacitive coupling. The static noise margin of DFG-SRAM is analytically estimated and expected to increase by more than 50% at 0.5-V operation.