Implementation of an a-Si:H TFT Gate Driver Using a Five-Transistor Integrated Approach

摘要

An integrated five-transistor/one-capacitor approach for realizing a a-Si:H thin-film transistor (TFT) gate driver operating in multiphase-clock mode is proposed and investigated. The driver needs only one large-size TFT and one small-size storage capacitor. The performance and function of the proposed driver are verified experimentally. The dependence of the performance on the device size is studied in detail. Stability of the fabricated drivers is tested using a flexible measurement scheme. Measured results show that the fabricated gate driver can work stably even though the low-level-holding TFTs have a threshold-voltage shift of 19 V.