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The Noise Performance of Electron-Multiplying Charge-Coupled Devices at Soft X-Ray Energy Values

机译:软X射线能量值下电子倍增电荷耦合器件的噪声性能

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摘要

The use of electron-multiplying charge-coupled devices (CCDs) for high-resolution soft X-ray spectroscopy has been proposed in previous studies, and the analysis that followed experimentally identified and verified a modified Fano factor for X-ray detection using an $^{55}hbox{Fe}$ X-ray source. However, further experiments with soft X-rays at 1000 eV were less successful, attributed to excessive split events. More recently, through the use of deep-depletion e2v CCD220 and on-chip binning, it has been possible to greatly reduce the number of split events, allowing the result for the modified Fano factor at soft X-ray energy values to be verified. This paper looks at the earlier attempt to verify the modified Fano factor at 1000 eV with e2v CCD97 and shows the issues created by splitting of the charge cloud between pixels. It then compares these earlier results with new data collected using e2v CCD220, investigating how split-event reduction allows the modified Fano factor to be verified for low-energy X-rays.
机译:在先前的研究中已经提出将电子倍增电荷耦合器件(CCD)用于高分辨率软X射线光谱学,随后进行的分析通过实验确定并验证了修正的Fano因子用于X射线检测的费用, ^ {55} hbox {Fe} $ X射线源。然而,归因于过度的分裂事件,用1000 eV的软X射线进行的进一步实验不太成功。最近,通过使用深度耗尽e2v CCD220和片上装仓,可以大大减少分裂事件的数量,从而可以验证软X射线能量值下修正的Fano因子的结果。本文着眼于较早的尝试,即使用e2v CCD97验证在1000 eV时的修正的Fano因子,并展示了由于像素之间电荷云的分裂而产生的问题。然后,它将这些较早的结果与使用e2v CCD220收集的新数据进行比较,研究分裂事件的减少如何使修改后的Fano因子能够针对低能X射线进行验证。

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