首页> 外国专利> Frontside illuminated charge-coupled device with high sensitivity to the blue, ultraviolet and soft X-ray spectral range

Frontside illuminated charge-coupled device with high sensitivity to the blue, ultraviolet and soft X-ray spectral range

机译:正面照明的电荷耦合器件对蓝,紫外和软X射线光谱范围具有高灵敏度

摘要

A CCD which is designed and processed so that most of each pixel is covered only with an ultra-thin gate electrode so that the CCD can be frontside illuminated and still achieve good sensitivity in the ultra- violet and soft x-ray spectral range. More specifically, in the present invention, the usual three gate structure and corresponding polysilicon layers 1, 2 and 3 of conventional thickness are reduced in width and supplemented by a fourth ultra-thin layer of polysilicon dubbed herein, poly 4, that is deposited over the entire array. This fourth layer, poly 4, makes contact with poly 3, so that when poly 3 is driven, it also drives poly 4, thus allowing charge to collect and transfer as in a normal three phase CCD. However, because the deposition thickness of the poly 4 layer is on the order of 400 Angsttoms, as opposed to conventional thicknesses of 2000 to 5000 Angsttoms, poly 4 is essentially transparent to photons and thereby allows achievement of high quantum efficiency.
机译:经过设计和加工的CCD,每个像素的大部分仅被超薄栅电极覆盖,因此CCD可以被正面照亮,并且在紫外和柔和的X射线光谱范围内仍具有良好的灵敏度。更具体地,在本发明中,减小了常规三层栅极结构以及相应的常规厚度的多晶硅层1、2和3的宽度,并通过沉积在其上的第四超薄多晶硅层(多晶硅4)作为补充。整个数组。第四层poly 4与poly 3接触,因此当驱动poly 3时,它也驱动poly 4,因此可以像通常的三相CCD一样收集和转移电荷。然而,由于多晶硅4层的沉积厚度为约400埃,与常规厚度2000至5000埃相反,因此多晶硅4对光子基本上是透明的,从而可以实现高量子效率。

著录项

  • 公开/公告号US5365092A

    专利类型

  • 公开/公告日1994-11-15

    原文格式PDF

  • 申请/专利权人 CALIFORNIA INSTITUTE OF TECHNOLOGY;

    申请/专利号US19930017423

  • 发明设计人 JAMES R. JANESICK;

    申请日1993-02-08

  • 分类号H01L29/78;H01L27/14;H01L31/00;

  • 国家 US

  • 入库时间 2022-08-22 04:05:55

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