InP-DHBT-on-BiCMOS Technology With $f_{T}/f_{max}$ of 400/350 GHz for Heterogeneous Integrated Millimeter-Wave Sources

摘要

This paper presents a novel InP-SiGe BiCMOS technology using wafer-scale heterogeneous integration. The vertical stacking of the InP double heterojunction bipolar transistor (DHBT) circuitry directly on top of the BiCMOS wafer enables ultra-broadband interconnects with ${<}{0.2}~{rm dB}$ insertion loss from 0–100 GHz. The $0.8times 5~mu{rm m}^{2}$ InP DHBTs show $f_{T}/f_{max}$ of 400/350 GHz with an output power of more than 26 mW at 96 GHz. These are record values for a heterogeneously integrated transistor on silicon. As a circuit example, a 164-GHz signal source is presented. It features a voltage-controlled oscillator in BiCMOS, which drives a doubler-amplifier chain in InP DHBT technology.