Gate-Recessed Integrated E/D GaN HEMT Technology With $f_{T}/f_{rm max}>300~{rm GHz}$

摘要

We report 1000-transistor-level monolithic circuit integration of sub-30-nm gate-recessed E/D GaN high-electron-mobility transistors with $f_{T}$ and $f_{max}$ above 300 GHz. Simultaneous $f_{T}/f_{max}$ of 348/340 and 302/301 GHz for E- and D-mode devices, respectively, was measured, representing a 58% increase in $f_{T}$ compared with our previous report, due to improved management of RC parasitic delay. Three-terminal E- and D-mode breakdown voltage of 10.7 and 11.8 V, respectively, is limited by gate–drain breakdown.