400 GHz F_(MAX) InP/GaAsSb HBT FOR MILLIMETER-WAVE APPLICATIONS

摘要

This paper presents multi-finger InP/GaAsSb/InP HBTs designed for millimeter-wave applications. The 0.7×10μm~2 emitter size 4- and 8- finger devices demonstrated f_T and f_(max) above 200 GHz and 400 GHz respectively, a current gain of 28 and an emitter breakdown voltage of TV. We also report on the performances of a 2-stage power amplifier based on more conservative devices (1×15μm~2 two-emitter finger). This circuit delivers an output power above 15 dBm at 60 GHz.