Limitations of the High–Low src='/images/tex/276.gif' alt='C'> – src='/images/tex/356.gif' alt='V'> Technique for MOS Interfaces With Large Time Constant Dispersion

摘要

We discuss the limitations of the high–low $CV$ technique in evaluating the interface trap density $(D_{rm IT})$ in MOS samples with a large time constant dispersion, as occurs in silicon carbide (SiC). We show that the high–low technique can seriously underestimate $D_{rm IT}$ for samples with large time constant dispersion, even if elevated temperatures are used to extend the range of validity.