A Unified Analytical Current Model for N- and P-Type Accumulation-Mode (Junctionless) Surrounding-Gate Nanowire FETs

摘要

An analytical current model unifying the n- and p-type accumulation-mode (junctionless) long-channel surrounding-gate nanowire field-effect transistors (AM-SGNW FETs), which is valid from low- to high-doping concentrations, is presented in this brief. A well-known continuous charge model derived by applying the parabolic potential approximation to the Poisson equation in a cylindrical coordinate system was used. The threshold voltage model is newly derived from the decoupled charge method to validate from low- to high-doping region. The simulation results obtained from the proposed charge and drain current model for the AM-SGNWFET agree well with those obtained from 3-D device simulation.