Analytical short-channel behavior models of Junctionless Cylindrical Surrounding-Gate MOSFETs

摘要

An analytical electrostatic potential model for Junctionless Cylindrical Surrounding-Gate (JLCSG) MOSFETs was developed by solving the 2-D Poisson equation based on parabolic approximation. Furthermore, the expression of electrostatic potential was used to derive the formulas for scale length, threshold voltage, subthreshold slope, and subthreshold drain current. The calculated results of the analytical models are consistent with those of a 3-D numerical simulator without any fitting parameters for various device parameters and bias conditions. This analytical model can serve as a guide in the design of JLCSG MOSFET circuits.