Experimental Demonstration of Ferroelectric Gate-Stack AlGaN/GaN-on-Si MOS-HEMTs With Voltage Amplification for Power Applications

摘要

AlGaN/GaN-on-Si metal-oxide–semiconductor high-elec- tron mobility transistors with integrated ferroelectric (FE) polarization gate-stacks improve the subthreshold swing (from 4 to 2 V/decade) and the peak transconductance ( (g_{m})) (18.4% enhancement) using the negative capacitance (NC) effect. An (I_{Dtextrm {lin}}) with ∼23% enhancement and a high overdrive voltage implies a higher (dPsi /dV_{g} ) at 2-D electron gas, due to NC with small (V_{{rm DS}}) . The channel conductance ( (g_{{d}}) ) at almost zero (V_{{rm DS}}) exhibits a 33% enhancement due to internal voltage amplification. The polarization is experimentally established with the validity of FE gate-stack with NC characteristics.