Analytical Modeling of Oxide-Based Bipolar Resistive Memories and Complementary Resistive Switches

摘要

To allow for novel memory and computing schemes based on the resistive switching memory (RRAM), physically based compact models are needed. This paper presents a new analytical model for HfO₂-based RRAM, relying on a simplified description of the conductive filament (CF) in terms of its diameter and gap length. The set and reset operations are described by CF growth and gap opening, respectively, activated by the local field and temperature. The analytical model is then used to describe the switching dynamics in the complementary resistive switch (CRS), consisting of an antiserial connection of two resistive devices. The impact of the gap resistivity on the CRS characteristics is discussed, highlighting the tradeoff between off-state leakage and set/reset window.