Cost-Effective Schottky-Barrier Diode Array With Ni–Silicidation Accessing Low Power Phase-Change Memory

摘要

A cost-effective fabrication of Schottky-barrier (SB) diode steering element for low power phase-change memory (PCM) application is realized. While superior drivability in conventional PN diode array, SB diode array with 0.0193-$mu{rm m}^{2}~(5F^{rm 2})$, performing higher switching speed, sufficient drive current density of ${sim}{rm 26.30}~{rm mA}/mu{rm m}^{2}$, disturbance immunity, and lower power consumption has been manufactured under 40-nm standard complementary metal oxide semiconductor technology. Simultaneously, different performance specifications, including integration scheme, $J_{rm ON}/{J}_{rm OFF}$ ratio, temperature characteristics, and scalability have been studied in detail and compared in two categories of accessing diode arrays. It manifests that the scaled SB diode array is suitable for full operation of PCM.