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Superlattice-like electrode for low-power phase-change random access memory

机译：用于低功率相变随机存取存储器的超晶格状电极

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摘要

Superlattice-like top electrode formed alternately by TiN and W was embedded into phase-change random access memory (PCRAM) with the aim of reducing the power. Ga_2Sb_4Te_3 film is employed as phase change layer. The minimum reset voltage of PCRAM based on superlattice-like electrode was significantly lower than that of one based on the conventional electrode. The set operation can be completed by an electric pulse as short as 5 ns. The superlattice-like-electrode-based PCRAM can be normally operated at 120℃ with endurance up to 1 × 10~6 cycles. The low thermal conductivity of superlattice-like electrode is responsible for the performance improvement of PCRAM.
机译：由TiN和W交替形成的超晶格状顶部电极嵌入到相变随机存取存储器（PCRAM）中，以降低功耗。 Ga_2Sb_4Te_3膜用作相变层。基于超晶格状电极的PCRAM的最小复位电压明显低于基于常规电极的PCRAM的最小复位电压。设置操作可以通过短至5 ns的电脉冲完成。基于超晶格状电极的PCRAM通常可在120℃的温度下运行，耐力可达1×10〜6个循环。超晶格状电极的低热导率是PCRAM性能提高的原因。

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  • 来源
    《Applied Physics Letters》 |2012年第11期|p.113104.1-113104.4|共4页
  • 作者

    Yegang Lu; Sannian Song; Zhitang Song; Liangcai Wu; Aodong He; Yuefeng Gong; Feng Rao; Bo Liu;

  • 作者单位

    State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050,China,Graduate School of Chinese Academy of Sciences, Beijing 100049, China;

    State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050,China;

    State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050,China;

    State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050,China;

    State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050,China,Graduate School of Chinese Academy of Sciences, Beijing 100049, China;

    State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050,China;

    State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050,China;

    State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050,China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 入库时间 2022-08-18 03:17:34

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