Performance Evaluation of In_0.53Ga_0.47As Esaki Tunnel Diodes on Silicon and InP Substrates

摘要

InGaAs Esaki tunnel diodes grown by molecular beam epitaxy on an Si substrate via a graded buffer and control InGaAs Esaki tunnel diodes grown on an InP substrate are compared in this paper. Statistics are used as a tool to show peak-to-valley ratio for the III–V on Si sample and the control that perform similarly below cm. The existence of a critical device area suggests the potential to utilize III–V on Si for other deeply scaled tunnel devices.