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机译:交错间隙In_(0.53)Ga_(0.47)As / GaAs_(0.5)Sb_(0.5)异质结Esaki隧道二极管中的基准电流密度
Department of Electrical and Microelectronic Engineering, Rochester Institute of Technology, Rochester,New York 14623, USA;
Department of Electrical and Microelectronic Engineering, Rochester Institute of Technology, Rochester,New York 14623, USA;
Department of Electrical and Microelectronic Engineering, Rochester Institute of Technology, Rochester,New York 14623, USA;
Department of Electrical and Microelectronic Engineering, Rochester Institute of Technology, Rochester,New York 14623, USA;
SEMATECH, Albany, New York 12203, USA;
SEMATECH, Albany, New York 12203, USA;
SEMATECH, Albany, New York 12203, USA;
SEMATECH, Albany, New York 12203, USA;
SEMATECH, Albany, New York 12203, USA;
机译:交错间隙In0.53Ga0.47As / GaAs0.5Sb0.5异质结Esaki隧道二极管中的基准电流密度
机译:GaAs_(0.5)SB_(0.5)/ IN_(0.53)GA_(0.47)作为异结型掺无电荷等离子体的模拟/数字性能改进的隧道FET
机译:具有异质栅介电的GaAs_(0.5)Sb_(0.5)/ In_(0.53)Ga_(0.47)As异质结Z栅TFET
机译:IN_(0.53)GA_(0.47)的电致发光为/ GaAs_(0.5)SB_(0.5)II型多量子阱二极管晶格与INP匹配
机译:高掺杂诱导的弹道带尾隧道电流校准
机译:In0.53 Ga0.47 as / alas谐振隧道二极管,峰值电流密度超过450 ka / cm2。