Benchmarking current density in staggered gap In0.53Ga0.47As/GaAs0.5Sb0.5 heterojunction Esaki tunnel diodes

摘要

The impact of dopant concentration on the current densities of In0.53Ga0.47As/GaAs0.5Sb0.5 heterojunction Esaki tunnel diodes is investigated. Increased doping density results in increased peak and Zener current densities. Two different structures were fabricated demonstrating peak current densities of 92?kA/cm2 and 572?kA/cm2, Zener current densities of 994?kA/cm2 and 5.1 MA/cm2 at a -0.5?V bias, and peak-to-valley current ratios of 6.0 and 5.4, respectively. The peak current scaled linearly with area down to a 70?nm diameter. The peak current densities were benchmarked against Esaki diodes from other material systems based on doping density and tunnel barrier height.