Si-InAs heterojunction Esaki tunnel diodes with high current densities

摘要

Si-InAs heterojunction p-n diodes were fabricated by growing InAs nanowires in oxide mask openings on silicon substrates. At substrate doping concentrations of 1 × 10~(16) and 1 × 10~(19) cm~(-3), conventional diode characteristics were obtained, from which a valence band offset between Si and InAs of 130 meV was extracted. For a substrate doping of 4 × 10~(19) cm~(-3), heterojunction tunnel diode characteristics were obtained showing current densities in the range of 50 kA/cm~2 at 0.5 V reverse bias. In addition, in situ doping of the InAs wires was performed using disilane to further boost the tunnel currents up to 100 kA/cm~2 at 0.5 V reverse bias for the highest doping ratios.