Tunnel diode used in the production of high frequency electronics comprises a silicon buffer layer, silicon semiconductor layers, a silicon intermediate layer and a silicon covering layer formed on a silicon substrate

摘要

Tunnel diode comprises a silicon buffer layer, a silicon semiconductor layer (1) doped up to above the degeneration density, a silicon intermediate layer, a silicon semiconductor layer (2) doped up to above the degeneration density and a silicon covering layer formed on a silicon substrate. Carbon is inserted into one of the above layers. An independent claim is also included for a process for the production of the tunnel diode comprising growing a silicon buffer layer, a silicon semiconductor layer (1) doped up to above the degeneration density, a silicon intermediate layer, a silicon semiconductor layer (2) doped up to above the degeneration density and a silicon covering layer on a silicon substrate while inserting carbon atoms during the growing process. Preferred Features: The silicon semiconductor layer (1) is p-conducting and the silicon semiconductor layer (2) is n-conducting, or the silicon semiconductor layer (1) is n-conducting and the silicon semiconductor layer (2) is p-conducting.