Visible Luminescence from Controlled Multi-Layer Stack Comprising of Thin Amorphous Silicon and Silicon Nitride Layers

摘要

We report photoluminescence (PL) and electroluminescence (EL) from multi-layer α-silicon/Si{sub}3N{sub}4. Peak PL is tunable within the red region by varying α-Si thickness. EL result is also reported. This structure benefits from a low-thermal-budget process (≤700°C).