Investigation of Self-Heating Effects in a 10-nm SOI-MOSFET With an Insulator Region Using Electrothermal Modeling

摘要

This paper investigates the heat transfer and temperature distribution as well as electric fields in a 10-nm MOSFET and insulator region silicon-on-insulator MOSFET (IR-SOI-MOSFET). An electrothermal model based on a dual-phase-lag model coupled with a second-order temperature-jump boundary condition and drift–diffusion (D-D) model has been elaborated. The D-D model is used to take into account that the heat source by Joule effect and the width of the channel depends on the electrical fields. The finite-element method has been employed to generate the numerical results. The model has been validated on the basis of available numerical results. It is found that once the Fourier law ceases to be valid, our model is able to predict the phonon transport and electrical properties in nanostructures. In a technological viewpoint, the IR-SOI-MOSFET is more thermally efficient compared with a classical SOI-MOSFET.